WSe 2 -contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions
نویسندگان
چکیده
منابع مشابه
Improved Contacts to MoS2 Transistors by Ultra-High Vacuum Metal Deposition.
The scaling of transistors to sub-10 nm dimensions is strongly limited by their contact resistance (RC). Here we present a systematic study of scaling MoS2 devices and contacts with varying electrode metals and controlled deposition conditions, over a wide range of temperatures (80 to 500 K), carrier densities (10(12) to 10(13) cm(-2)), and contact dimensions (20 to 500 nm). We uncover that Au ...
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ژورنال
عنوان ژورنال: 2D Materials
سال: 2017
ISSN: 2053-1583
DOI: 10.1088/2053-1583/aa6bea